SiC Schottky Barrier Diode "ICS Series"
Contributes to the high efficiency of power supplies through high current, high voltage characteristics, and fast recovery characteristics of SiC.
Our ICS series consists of Schottky barrier diodes made from SiC. By using SiC as the material, we achieve high current and high voltage characteristics that were not possible with silicon, while also maintaining the fast recovery characteristics of Schottky barrier diodes. By using them in power supply circuits for PFC (power factor correction circuits) and as freewheeling diodes in inverter circuits, we contribute to improving power supply efficiency and reducing excess power consumption during switching. Compared to fast recovery diodes known for their high-speed recovery characteristics, our products have achieved a 33.6% increase in efficiency and a 48.2% reduction in losses. Additionally, beyond improving power supply efficiency, our SiC Schottky barrier diodes offer advantages such as operation in high-temperature environments exceeding silicon and longer lifespan, so we encourage you to try our SiC Schottky barrier diodes.
- Company：イサハヤ電子
- Price：Other
